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2PS04017E32G30878 Infineon IGBT

2PS04017E32G30878

  • Model: 2PS04017E32G30878
  • 131 Units in Stock
  • Manufactured by: Infineon

Description of 2PS04017E32G30878

Key Parameters

Mechanical Parameter

Raster size10.12 x 10.18mm2
Area total / active103 / 71.5
Emitter pad size8x( 1.78x2.58 )
Gate pad size0.757 x 1.48
Thickness280μm
Wafer size150mm
Flat position90deg
Max.possible chips per wafer130 pcs
Passivation frontsidePhotoimide
Emitter metalization3200 nm Al Si 1%
Collector metalization1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bondelectrically conductive glue or solder
Wire bondAl, <500μm
Reject Ink Dot Size0.65mm ; max 1.2mm
Recommended Storage EnvironmentStore in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C


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