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2PS08012E32G30900 Infineon IGBT

2PS08012E32G30900

  • Model: 2PS08012E32G30900
  • 112 Units in Stock
  • Manufactured by: Infineon

Description of 2PS08012E32G30900

Features

  • Very low VCE(sat) 1.5 V (typ.)
  • Maximum Junction Temperature 175 °C
  • Short circuit withstand time – 5μs
  • TrenchStop® and Fieldstop technology for 600 V applications offers :
    • very tight parameter distribution
    • high ruggedness, temperature stable behavior
  • Low EMI
  • Qualified according to JEDEC1 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models

1 J-STD-020 and JESD-022

 

Applications

  • Variable Speed Drive for washing machines and air conditioners
  • Buck converters

Key Parameters Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE600V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC12
6
A
Pulsed collector current, tp limited by TjmaxICpuls18
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 175°C
-18
Gate-emitter voltageVGE±20V
Short circuit withstand time2
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
tSC5µs
Power dissipation
TC = 25°C
Ptot88W
Operating junction and storage temperatureTj-40...+175°C
Storage temperatureTstg-55...+175
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
 260

2) Allowed number of short circuits: <1000; time between short circuits: >1s.


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