2PS09012S43G30860 Infineon IGBT

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2PS09012S43G30860

Powerful monolithic body diode with low forward voltage designed for soft commutation only
TrenchStop^? technology applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V_CEsat
Low EMI
Qualified according to JEDEC J-STD-020 and JESD-022 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models:

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current, limited by T_vjmax T_c = 25°C T_c = 100°C	I_C	80.0 40.0	A
Pulsed collector current, tp limited by T_vjmax	I_Cpuls	120.0	A
Turn off safe operating area V_CE ? 600V, T_j ? 175°C	-	120.0	A
Diode forward current, limited by T_vjmax T_c = 25°C T_c = 100°C	I_F	80.0 40.0	A
Diode pulsed current, t_p limited by T_v_jmax	I_Fpuls	120.0	A
Gate-emitter voltage	V_GE	±20	V
Power dissipation T_c = 25°C Power dissipation T_c = 100°C	P_tot	305.0 152.0	W
Operating junction temperature	T_v_j	-40...+175	°C
Storage temperature	T_stg	-55...+175	°C
Soldering temperature, wavesoldering, 1.6 mm (0.063 in.) from case for 10s		260	°C
Mounting torque, M3 screw Maximum of mounting processes: 3	M	0.6	Nm