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2PS12012E33G28375 Infineon IGBT

2PS12012E33G28375

  • Model: 2PS12012E33G28375
  • 125 Units in Stock
  • Manufactured by: Infineon

Description of 2PS12012E33G28375

Applications

  • Designed for operation above 30 kHz
  • NPT-Technology for 600V applications offers: parallel switching capability,  moderate Eoff increase with temperature, very tight parameter distribution
  • High ruggedness, temperature stable behaviour
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1 for target applications

Key Parameters

Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE600V
DC collector current
TC = 25°C
TC = 100°C
IC
100
50
A
Pulsed collector current, tp limited by TjmaxICpuls150
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
-150
Avalanche energy single pulse
IC = 50A, VCC=50V, RGE=25Ω
start TJ=25°C
EAS280
mJ
Gate-emitter voltage static
                               transient (tp<1μs, D<0.05)
VGE±20
±30
V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
tSC10μs
Power dissipation
TC = 25°C
Pt o t416W
Operating junction and storage temperatureTj ,
Ts tg
-55...+150oC
Time limited operating junction temperature for t < 150hTj ( t l )175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s-260

1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.


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