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2T4771NKE01W33433 Infineon IGBT

2T4771NKE01W33433

  • Model: 2T4771NKE01W33433
  • 129 Units in Stock
  • Manufactured by: Infineon

Description of 2T4771NKE01W33433

APPLICATIONS

  • Designed for:
    • Motor controls
    • Inverter
  • NPT-Technology for 600V applications offers:
    • very tight parameter distribution
    • high ruggedness, temperature stable behaviour
    • parallel switching capability
  • Very soft, fast recovery anti-parallel EmCon diode
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1 for target applications

KEY PARAMETERS Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE600V
DC collector current
TC = 25°C
TC = 100°C
IC9.4
4.9
A
Pulsed collector current, tp limited by TjmaxICpul s19 
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
-19 
Diode forward current
TC = 25°C
TC = 100°C
IF10
4
 
Diode pulsed current, tp limited by TjmaxIFpul s19
Gate-emitter voltageVGE±20V
Short circuit withstand time2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
tSC10µs
Power dissipation
TC = 25°C
Pt o t50W
Operating junction and storage temperatureTj , Tstg-55...+150°C
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Ts260°C

1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.


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