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4MBI150T-060 Fuji IGBT

4MBI150T-060

  • Model: 4MBI150T-060
  • 311 Units in Stock
  • Manufactured by: Fuji

Description of 4MBI150T-060

Description

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings, Tj = 25 °C Unless Otherwise Specified

RatingsSymbolCM200DY-12HUnits
Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Collector-Emitter Voltage (G-E SHORT)VCES600Volts
Gate-Emitter Voltage (C-E SHORT)VGES±20Volts
Collector Current (Tc = 25°C)IC200Amperes
Peak Collector CurrentICM400*Amperes
Emitter Current** (Tc = 25°C)IE200Amperes
Peak Emitter Current**IEM400*Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)Pc780Watts
Mounting Torque, M5 main Terminal1.47 ~ 1.96N · m
Mounting Torque, M6 Mounting1.96 ~ 2.94N · m
Weight270Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)Viso2500Vrms

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).


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