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5SNA-0800N330100 ABB IGBT

5SNA-0800N330100

  • Model: 5SNA-0800N330100
  • 264 Units in Stock
  • Manufactured by: ABB

Description of 5SNA-0800N330100

Key Parameters

Maximum rated values:

Parameter

Symbol Conditionsmin
max
Unit
 Collector-emitter voltageVCES VGE = 0 V, Tvj ≥ 25 °C  3300 V
 DC collector current IC Tc =  80 °C  800 A
 Peak collector current

 ICM

 tp =  1ms, Tc = 80 °C  1600 A

 Gate-emitter voltage

 VGES

  -20 20 V
 Total power dissipation Ptot Tc = 25 °C, per switch (IGBT)  7700 W
 DC forward current

 IF

   800 A
 Peak forward current

 IFRM

   1600 A
 Surge current IFSM

 VR = 0 V, Tvj = 125 °C

 tp = 10ms, half-sinewave

  8000 A
 IGBT short circuit SOA tpsc

 VCC = 2500 V, TCEM CHIP ≤ 3300 V

 VGE 15 V, Tvj ≤ 125 °C

  10 μs
 Isolation voltage VisolVisol
 1 min, f = 50 Hz  6000 V
 Junction temperature Tvj   150 °C
 Junction operating temperature Tvj(op)  -40 125 °C
 Case temperature

 Tc

  -40 125 °C
 Storage temperature Tstg  -40 125 °C
Mounting torques 2) Ms Base-heatsink, M6 screws  4 6 Nm 
 Mt1 Main terminals, M8 screws  8 10
 Mt2 Auxiliary terminals, M4 screws  2 3


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