6PS01512E33G30176 Infineon IGBT

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6PS01512E33G30176

Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included.

DC link voltage	L_s = tbd -40 < T_vj < 150°C 0 < I_{C turn off} < 2*I_{C max}	U_DC		900	V
DC continuous current	T_case = 100°C T_vj = T_{vjop max}	I_{C nom}		100	A
IGBT collector emitter voltage	T_vj=25°C	U_CES		1200	V
IGBT collector emitter saturation voltage	T_vj =25°C @ I_C=100A T_vj =150°C @ I_C=100A	U_CEsat	1,75 2,10	2,15	V
Diode repetitive peak reverse voltage	T_vj=25°C	U_RRM		1200	V
Diode forward voltage	T_vj =25°C @ I_C=100A T_vj =150°C @ I_C=100A	U_F	1,75 1,65	2,15	V
Operating junction temperature	IGBT and Diode	T_vjop		150	°C
Turn on energy loss per puls	IGBT, U_DC=600V, I_C=100A T_vj=150°C, di/dt,= 1,8kA/μs	E_on	21,3		mJ
Turn off energy loss per puls	IGBT, U_DC=600V, I_C=100A T_vj=150°C, du/dt = 3,6kV/μs	E_off	20,0		mJ
Reverse recovery energy	Diode, U_DC=600V, I_F=100A T_vj=150°C, di/dt = 1,8kA/μs	E_rec	24		mJ