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BSM25GB120DN2 Infineon IGBT

BSM25GB120DN2

  • Model: BSM25GB120DN2
  • 99 Units in Stock
  • Manufactured by: Infineon

Description of BSM25GB120DN2

Key Parameters


Absolute Maximum Ratings (TC=25°C)

ItemSymbolUnitMBN1800E17E
Collector Emitter VoltageVCESV1,700
Gate Emitter VoltageVGESV±20
Collector CurrentDCICA1,800
1msICp3,600
Forward Current DCIFA1,800
1msIFM3,600
Total Power dissipationPtotkW8.3
Junction TemperatureTj°C-40 ~ +125
Storage TemperatureTstg°C-40 ~ +125
Isolation Voltage
VISOVRMS4,000 (AC 1 minute)
Screw Torque Terminals
(M4)-N·m 2               (1)
(M8)-
 15               (1)
Mounting (M6)- 5               (2)

Notes: (1) Recommended Value 2.0+0.1 -0.2 / 15+0-3N·m
           (2) Recommended Value 5.0±1N·m


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