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BSM75GB170DN2HOSA1 Infineon IGBT

BSM75GB170DN2HOSA1

  • Model: BSM75GB170DN2HOSA1
  • 100 Units in Stock
  • Manufactured by: Infineon

Description of BSM75GB170DN2HOSA1

Category

Discrete Semiconductor Products

Family

Transistors - IGBTs - Modules

Manufacturer

Infineon Technologies

Series-
Part StatusLast Time Buy
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)110A
Power - Max625W
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 75A
Current - Collector Cutoff (Max)-
Input Capacitance (Cies) @ Vce11nF @ 25V
InputStandard
NTC ThermistorNo
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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