Description of CM600HA-12H
Description:
Mitsubishi IGBT Modules
are designed for use in switching applications. Each module consists of one IGBT in a single configura- tion with a reverse-connected su- per-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal man- agement.
Features:
??Low Drive Power
??Low VCE(sat)
??Discrete Super-Fast Recovery Free-Wheel Diode
??High Frequency Operation
??Isolated Baseplate for Easy Heat Sinking
Applications:
??AC Motor Control
??Motion/Servo Control
??UPS
??Welding Power Supplies
Key Parameters:
| Ratings |
Symbol |
CM600HU-12H |
Units |
| Junction Temperature |
Tj |
-40 to 150 |
C |
| Storage Temperature |
Tstg |
-40 to 125 |
C |
| Collector-Emitter Voltage (G-E SHORT) |
VCES |
600 |
Volts |
| Gate-Emitter Voltage (C-E SHORT) |
VGES |
20 |
Volts |
| Collector Current (Tc = 25 C) |
IC |
600 |
Amperes |
| Peak Collector Current (Tj 150 C) |
ICM |
1200* |
Amperes |
| Emitter Current** (Tc = 25 C) |
IE |
600 |
Amperes |
| Peak Emitter Current** |
IEM |
1200* |
Amperes |
| Maximum Collector Dissipation (Tc = 25 C) |
Pc |
2100 |
Watts |
| Mounting Torque, M8 Main Terminal |
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8.83~10.8 |
N
? m |
| Mounting Torque, M6 Mounting |
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1.96~2.94 |
N
? m |
| Mounting Torque, M4 Terminal |
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0.98~1.47 |
N
? m |
| Weight |
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560 |
Grams |
| Isolation Voltage (Main Terminal to
Baseplate, AC 1 min.) |
Viso |
2500 |
Vrms |
| Characteristics |
Symbol |
Test
Conditions |
Min. |
Typ. |
Max. |
Units |
| Input Capacitance |
Cies |
|
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60 |
nF |
| Output Capacitance |
Coes |
VGE = 0V, VCE
= 10V |
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21 |
nF |
| Reverse Transfer Capacitance |
Cres |
|
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12 |
nF |
| Resistive Turn-on Delay Time |
td(on) |
|
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350 |
ns |
| Load Rise Time |
tr |
VCC = 300V, IC = 600A, |
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700 |
ns |
| Switching Turn-off Delay Time |
td(off) |
VGE1 = VGE2
= 15V, RG = 1.0 |
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350 |
ns |
| Times Fall Time |
tf |
|
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300 |
ns |
| Diode Reverse Recovery Time |
trr |
IE = 600A, diE/dt = ??200A/ s |
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110 |
ns |
| Diode Reverse Recovery Charge |
Qrr |
IE = 600A, diE/dt = ??200A/ s |
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1.62 |
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C |
| Thermal and Mechanical Characteristics, Tj = 25 |
C
unless otherwise specified |
|
|
|
| Characteristics Symbol |
Test
Conditions Min. |
Typ. |
Max. |
Units |
| Thermal Resistance, Junction to Case |
Rth(j-c) |
Per
IGBT |
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0.06 |
C/W |
| Thermal Resistance, Junction to Case |
Rth(j-c) |
Per
FWDi |
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0.12 |
C/W |
| Contact Thermal Resistance |
Rth(c-f) |
Per
Module, Thermal Grease Applied |
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0.035 |
C/W |
