Description of CPV362M4F
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Key Parameters
- Output Current in a typical 5.0 kHz Motor Drive
- 11 ARMS per phase (3.1 kW total) with TC = 90°C and TJ = 125°C
- Supply Voltage 360Vdc
- Power Factor 0.8
- Modulation Depth 115%
