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DIM800NSM33-F Dynex IGBT

DIM800NSM33-F

  • Model: DIM800NSM33-F
  • 328 Units in Stock
  • Manufactured by: Dynex

Description of DIM800NSM33-F

Description

The Powerline range of high power modules includes half bridge, chopper, bi-directional, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM800NSM33-F000 is a single switch 3300V, soft punch through, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10μs short circuit withstand. This device is optimized for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimize circuit layouts and utilize grounded heat sinks for safety.

Key Parameters

VCES

 3300V
VCE(sat)(typ)2.8V
IC(max)800A

IC(PK)

(max)1600A

 


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