>

F4-30R06W1E3 Infineon IGBT

F4-30R06W1E3

  • Model: F4-30R06W1E3
  • 92 Units in Stock
  • Manufactured by: Infineon

Description of F4-30R06W1E3

Key Parameters Absolute Maximum Ratings (TC=25°C)

ItemSymbolUnitMBN1200H45E2-H
Collector Emitter VoltageVCESV4,500
Gate Emitter VoltageVGESV±20
Collector CurrentDCICA1,200 (Tc=80 °C)
1msICp2,400
Forward CurrentDCIF A1,200
1msIFM2,400
Junction TemperatureTj°C-40 ~ +125
Storage TemperatureTstg°C-50 ~ +125
Isolation VoltageVISOVRMS8,400 (AC 1 minute)
Screw TorqueTerminals (M4/M8)-N·m2/10     (1)
Mounting (M6)-6     (2)

Notes:

(1) Recommended Value 1.8±0.2/9±1N·m

(2) Recommended Value 5.5±0.5N·m


Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related Infineon IGBT product

F4-25R12YT3_B5F4-25R12YT3_B5
F4-35R12NS4 F4-35R12NS4
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.