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FB15R06KL4_B1 Infineon IGBT

FB15R06KL4_B1

  • Model: FB15R06KL4_B1
  • 106 Units in Stock
  • Manufactured by: Infineon

Description of FB15R06KL4_B1

Features

  • Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
  • Very low VCE(sat) 1.5 V (typ.)
  • Maximum Junction Temperature 175 °C
  • Short circuit withstand time – 5μs
  • TrenchStop® and Fieldstop technology for 600 V applications offers :
    • very tight parameter distribution
    • high ruggedness, temperature stable behavior
    • low VCE(sat)
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Qualified according to JEDEC1 for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models

1 J-STD-020 and JESD-022

Applications

  • Inductive Cooking
  • Soft Switching Applications

Key Parameters

Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE600V
DC collector current, limited by Tjmax
Tc = 25°C
Tc = 100°C
IC80
40
A

Pulsed collector current, tp limited by TjmaxICpuls120
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)-120
Diode forward current, limited by Tjmax
Tc = 25°C
Tc = 100°C
IF40
20
Diode pulsed current, tp limited by TjmaxIFpuls60
Gate-emitter voltage
Tansient  Gate-emitter voltage (tp < 5 ms)
VGE±20
±25
V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
tSC5μs
Power dissipation Tc = 25°CPtot303W
Operating junction and storage temperatureTj-40...+175oC
Storage temperatureTstg-55...+175
Soldering temperature, 1.6 mm (0.063 in.) from case for 10s -
260

2) Allowed number of short circuits: <1000; time between short circuits: >1s.


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