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FF100R12RT4 Infineon IGBT

FF100R12RT4

  • Model: FF100R12RT4
  • 95 Units in Stock
  • Manufactured by: Infineon

Description of FF100R12RT4

Key Parameters

Absolute Maximum Ratings (TC=25°C)

ItemSymbolUnitMBN1200E33C
Collector Emitter VoltageVCESV3,300
Gate Emitter VoltageVGESV±20
Collector CurrentDCICA1,200
1msICp2,400
Forward Current DCIFA1,200
1msIFM2,400
Junction TemperatureTj°C-40 ~ +125
Storage TemperatureTstg°C-40 ~ +125
Isolation Voltage
VISOVRMS6,000 (AC 1 minute)
Screw Torque Terminals (M4/M8)-N·m 2 / 10            (1)
Mounting (M6)-
 6               (2)

Notes: (1) Recommended Value 1.8±0.2/9±1N·m           (2) Recommended Value 5.5±0.5N·m


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