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FF600R12ME4 Infineon IGBT

FF600R12ME4

  • Model: FF600R12ME4
  • 191 Units in Stock
  • Manufactured by: Infineon

Description of FF600R12ME4

Description

The Powerex Dual Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of two Darlington Transistors with each transistor having a reverse parallel connected high-speed diode.

Key Parameters Absolute Maximum Ratings

RatingsSymbol
KD621220Units
Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Collector-Emitter Sustaining Voltage, VBE = -2VVCEV(sus)1200Volts
Collector-Base VoltageVCBO1200Volts
Emitter-Base VoltageVEBO7Volts
Collector-Emitter Voltage, VBE = -2VVCEV1200Volts
Continuous Collector CurrentIC200Amperes
Diode Forward CurrentIFM200Amperes
Continuous Base CurrentIB10Amperes
Diode Surge CurrentIFSM2000Amperes
Power Dissipation, (Each Transistor)
Pt1560Watts
Max. Mounting Torque M5 Terminal Screws
-26in-lb
Max. Mounting Torque M6 Mounting Screws
-26in-lb
Modular Weight (Typical)
-870Grams
V IsolationVRMS
2500Watts


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