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FF75R12YT3 Infineon IGBT

FF75R12YT3

  • Model: FF75R12YT3
  • 173 Units in Stock
  • Manufactured by: Infineon

Description of FF75R12YT3

Description

Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

CharacteristicsSymbolTest ConditionsMin.Typ.Max.Units
Thermal Resistance, Junction to CaseRth(j-c)QPer IGBT 1/2 Module, TC Reference,
Point per Outline Drawing

0.22°C/W
Thermal Resistance, Junction to CaseRth(j-c)DPer FWDi 1/2 Module, TC Reference
Point per Outline Drawing


0.47°C/W
Thermal Resistance, Junction to CaseRth(j-c)'QPer IGBT 1/2 Module,
TC Reference Point Under Chips
0.17°C/W
Thermal Resistance, Junction to CaseRth(j-c)'DPer FWDi 1/2 Module, TC Reference
Point per Outline Drawing
0.29°C/W
Contact Thermal Resistance
Rth(c-f)Per 1/2 Module, Thermal Grease Applied

0.07
°C/W
External Gate ResistanceRG 3.131Ω


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