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FP10R12NT3 Infineon IGBT

FP10R12NT3

  • Model: FP10R12NT3
  • 409 Units in Stock
  • Manufactured by: Infineon

Description of FP10R12NT3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

CharacteristicsSymbolTest ConditionsMin.Typ.Max.Units
Thermal Resistance, Junction to CaseRth(j-c)QPer IGBT 1/2 Module, TC Reference
Point per Outline Drawing
0.24°C/W
Thermal Resistance, Junction to CaseRth(j-c)DPer FWDi 1/2 Module, TC Reference
Point per Outline Drawing
0.47°C/W
Thermal Resistance, Junction to CaseRth(j-c)'QPer IGBT 1/2 Module, 
TC Reference Point Under Chips
0.16
°C/W
Contact Thermal ResistanceRth(c-f)Per 1/2 Module, Thermal Grease Applied0.035°C/W


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