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FP25R12KT4 Infineon IGBT

FP25R12KT4

  • Model: FP25R12KT4
  • 115 Units in Stock
  • Manufactured by: Infineon

Description of FP25R12KT4

Description

High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Key Parameters

Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE600V
DC collector current, limited by Tvjmax
Tc = 25°C
Tc = 100°C
IC
40.0
20.0
A
Pulsed collector current, tp limited by TvjmaxICpuls80.0
Turn off safe operating area VCE ≤ 600V, Tvj ≤ 175°C-80.0
Diode forward current, limited by Tvjmax
Tc = 25°C
Tc = 100°C
IF
20.0
10.0
Diode pulsed current, tp limited by TvjmaxIFpuls80.0
Gate-emitter voltageVGE±20V
Short circuit withstand time
VGE = 15V, Vcc ≤ 400V
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
Tvj = 150°C
tsc5μs
Power dissipation Tc = 25°C
Power dissipation Tc = 100°C
Ptot170.0
85.0
W
Operating junction temperatureTj-40...+175°C
Storage temperatureTstg-55...+150°C
Soldering temperature
reflow soldering (according to JEDEC-J-STA-020)

PG-TO251-3

260
°C


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