FP50R12KT3 Infineon IGBT

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FP50R12KT3

Model: FP50R12KT3
284 Units in Stock
Manufactured by: Infineon

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Description of FP50R12KT3

Description

The Powerex Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse parallel connected high-speed diode and base-to-emitter speed-up diode.

Key Parameters Absolute Maximum Ratings

Ratings	Symbol	KS621K60	Units
Junction Temperature	T_j	-40 to 150	°C
Storage Temperature	T_stg	-40 to 125	°C
Collector-Emitter Sustaining Voltage, V_BE = -2V	V_CEV(sus)	1000	Volts
Collector-Base Voltage	V_CBO	1000	Volts
Emitter-Base Voltage	V_EBO	7	Volts
Collector-Emitter Voltage	V_CEV	1000	Volts
Continuous Collector Current	I_C	600	Amperes
Diode Forward Current	I_FM	600	Amperes
Continuous Base Current	I_B	30	Amperes
Diode Surge Current	I_FSM	6000	Amperes
Power Dissipation	P_t	3500	Watts
Max. Mounting Torque M8 Terminal Screws (E, C)	-	95	in-lb
Max. Mounting Torque M4 Terminal Screws (B, Bx, E)	-	12	in-lb
Max. Mounting Torque M6 Mounting Screws	-	26	in-lb
Modular Weight (Typical)	-	1100	Grams
V Isolation	V_RMS	2500	Watts