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FS100R06KE3 Infineon IGBT

FS100R06KE3

  • Model: FS100R06KE3
  • 192 Units in Stock
  • Manufactured by: Infineon

Description of FS100R06KE3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings

RatingsSymbolCM600HG-130HUnits
Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Operating TemperatureTopr-40 to +125°C
Collector-Emitter Voltage (VGE = 0V)VCES6500Volts
Gate-Emitter Voltage (VCE = 0V)VGES±20Volts
Collector Current (DC, Tc = 80°C)IC600Amperes
Peak Collector Current (Pulse)ICM1200*Amperes
Emitter Current** (Tc = 25°C)IE600Amperes
Emitter Surge Current** (Pulse)IEM1200*Amperes
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj(max) ≤ 125°C)PC8900Watts
Partial Discharge (V1 = 6900 Vrms, V2 = 5100 Vrms, 60 Hz (Acc. to IEC 1287))Qpd10pC
Max. Mounting Torque M8 Main Terminal Screws-133
in-lb
Max. Mounting Torque M6 Mounting Screws-53
in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws-17
in-lb
Module Weight (Typical)-1.35kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)Viso10200Volts
Maximum Turn-Off Switching Current (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C)-1200Amperes
Short Circuit Capability, Maximum Pulse Width (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C)-10
μs
Maximum Reverse Recovery Instantaneous Power
(VCC ≤ 4500V, die/dt ≤ 3000A/μs, Tj = 125°C)
-3600kW

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(oprmax) rating (125°C).
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).


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