FS15R06VE3 Infineon IGBT

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FS15R06VE3

Reverse conducting IGBT with monolithic body diode
Powerful monolithic body diode with low forward voltage designed for soft commutation only
TrenchStop^® technology applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V_CEsat
- easy parallel switching capability due to positive temperature coefficient in VCEsat
Low EMI
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant; solder temperature 260°C, MSL3
Complete product spectrum and PSpice Models

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current, limited by T_jmax T_C = 25°C T_C = 100°C	I_C	12.0 6.0	A
Pulsed collector current, tp limited by T_jmax	I_Cpuls	18.0	A
Turn off safe operating area V_CE ≤ 600V, T_j ≤ 175°C	-	18.0	A
Diode forward current, limited by T_jmax T_c = 25°C T_c = 100°C	I_F	12.0 6.0	A
Diode pulse current, tp limited by T_jmax	I_Fpuls	18.0	A
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time V_GE = 15V, Vcc ≤ 250, Tj ≤ 150°C Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s	t_SC	10	µs
Power dissipation T_c = 25°C	P_tot	88.0	W
Operating junction temperature	T_j	-40...+175	°C
Storage temperature	T_stg	-40...+175	°C
Soldering temperature for 10 s (according to JEDEC J-STA-020A)	PG-TO252-3	260	°C