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FS35R12KE3G Infineon IGBT

FS35R12KE3G

  • Model: FS35R12KE3G
  • 139 Units in Stock
  • Manufactured by: Infineon

Description of FS35R12KE3G

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

CharacteristicsSymbolTest ConditionsMin.Typ.Max.Units
Thermal Resistance, Junction to Case*Rth(j-c)QPer IGBT0.186°C/W
Thermal Resistance, Junction to Case*Rth(j-c)DPer FWDi


0.34°C/W
Contact Thermal ResistanceRth(c-f)Per Module, Thermal Grease Applied

0.022

°C/W
External Gate ResistanceRG 3.142Ω

*TC, Tf measured point is just under the chips.


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