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FS50R12W2T4 Infineon IGBT

FS50R12W2T4

  • Model: FS50R12W2T4
  • 122 Units in Stock
  • Manufactured by: Infineon

Description of FS50R12W2T4

Description

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel diode

Features

  • TrenchStop® and Fieldstop technology for 1000 V applications offers: low VCE(sat); very tight parameter distribution; high ruggedness, temperature stable behavior; and positive temperature coefficient in VCE(sat)
  • Designed for: frequency Converters, uninterrupted Power Supply
  • Low EMI
  • Low gate charge
  • Very soft, fast recovery anti-parallel diode
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant

Key Parameters

Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE1000V
DC collector current, limited by Tjmax
Tc = 25°C
Tc = 100°C
IC
60.0
30.0
A
Pulsed collector current, tp limited by TjmaxICpuls90.0
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 175°C
-90.0
Diode forward current, limited by Tjmax
Tc = 25°C
Tc = 100°C
IF
60.0
30.0
Diode pulsed current, tp limited by TjmaxIFpuls90.0

Gate-emitter voltage
Transient Gate-emitter voltage (tp = 5μs, D < 0.010)

VGE±20
±25
 V
Power dissipation Tc = 25°C
Ptot412.0
W
Operating junction temperatureTj-55...+175°C
Storage temperatureTstg-55...+175°C
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
PG-TO247-3-21
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.06Nm


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