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Fuji

Fuji Electric Co.,LTD

Fuji Electric Device technology (FDT) began producing and marketing IGBTs (insulated gate bipolar transistors) in 1988 and has been supplying them to the market ever since. FDT succeeded in enhancing the characteristics of the first three IGBT generations, by using epitaxial wafers, optimizing the lifetime control techniques, and by applying fine patterning technology. The company was able to significantly enhance the characteristics of the fourth and fifth generations by switching from epitaxial wafers to FZ (floating zone) wafers. This achievement brought about a revolutionary transition in conventional approaches to IGBT design.

Fuji IGBT series products

Fuji IGBT Modules PIM
Fuji IGBT Modules 6-Pack
Fuji IGBT Modules 4-Pack
IGBT Modules 2-Pack
Fuji IGBT Modules 1-Pack
Fuji IGBT Modules IPM
Fuji IGBT Discrete

Fuji IGBT Modules now in stock - IGBT Express stocks an extensive and comprehensive line of Fuji igbt modules for most industrial applications - one of hundreds of categories of industrial and electronic products in stock.

Whether you need Fuji igbt modules or something else, IGBT Express should be your first choice for IGBT electronic components. We make it easy to find the exact fuji igbt module you need. 




Product Image Item Name Stock- Price
6MBI100VA-120-50

6MBI100VA-120-50

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Packaging :Bulk Standard Pack Qty :6
295

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2MBI200S120

2MBI200S120

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max :600 V Continuous Collector Current at...
294

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2MBI300N-120-01

2MBI300N-120-01

Manufacturer :IXYS RoHS : Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max :600 V Continuous Collector Current at...
293

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2MBI200N-120

2MBI200N-120

291

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2MBI300N-060

2MBI300N-060

290

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2DI200M-050

2DI200M-050

289

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2MBI200N-060-03

2MBI200N-060-03

288

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2MBI225U4N-120-50

2MBI225U4N-120-50

KEY PARAMETERS Absolute Maximum Ratings (at Tc= 25oC unless otherwise specified)ItemsSymbolsConditionsMaximum RatingsUnitsCollector-Emitter...
287

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1MBI600PX-140-03

1MBI600PX-140-03

286

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2MBI150SC-120

2MBI150SC-120

285

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1MBI600PX-140

1MBI600PX-140

284

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1DI300Z-100

1DI300Z-100

283

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2MBI100U4H-170

2MBI100U4H-170

KEY PARAMETERS Absolute Maximum Ratings (at Tc= 25°C unless otherwise specified)ItemsSymbolsConditionsMaximum RatingsUnitsCollector-Emitter...
282

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1MBI600PX-120

1MBI600PX-120

Description Device Name: IGBT Module Spec. No.: MS5F 4405 Key Parameters Absolute Maximum Ratings (at Tc=25oC unless otherwise specified) ...
281

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1DI200MA-050

1DI200MA-050

280

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2MBI100F-120

2MBI100F-120

KEY PARAMETERS Absolute Maximum RatingsItemsSymbolsRatingsUnitsCollecter-Emitter VoltageVCES1200VGate-Emitter VoltageVGES±20VCollecter...
279

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1DI150GE-100

1DI150GE-100

277

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2FI50A-030D

2FI50A-030D

Absolute Maximum Ratings Item Symbol Conditions Rating Unit Repetitive peak reverse voltageVRRM 300VNon-repetitive peak reverse voltageVRSM...
276

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1MBI300S-120

1MBI300S-120

275

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2DI75S-050A

2DI75S-050A

273

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HGTG12N60B3D

HGTG12N60B3D

271

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2DI50Z-140

2DI50Z-140

270

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1F60A-120R

1F60A-120R

269

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2DI30A-140

2DI30A-140

267

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1DI50MA-050

1DI50MA-050

266

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1DI300Z-140

1DI300Z-140

263

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7MBR35SB120

7MBR35SB120

Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Symbol Condition Rat ing Unit ...
236

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7MBR25SA120

7MBR25SA120

IGBT MODULE (S series) 1200V / 25A / PIM Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake...
202

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2MBI600VE-060-50

2MBI600VE-060-50

Insulated Gate Bipolar Transistor, 780A I(C), 600V V(BR)CES
200
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2MBI75VA-120-50

2MBI75VA-120-50

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
100
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New Products For March - Fuji


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