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FZ1200R17KE3 Infineon IGBT

FZ1200R17KE3

  • Model: FZ1200R17KE3
  • 232 Units in Stock
  • Manufactured by: Infineon

Description of FZ1200R17KE3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

CharacteristicsSymbolCM200DX-24AUnits
Power Device Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Mounting Torque, M6 Mounting Screws31in-lb
Mounting Torque, M6 Main Terminal Screw40in-lb
Baseplate Flatness, On Centerline X, Y ±0 ~ +100μm
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)VISO2500Volts


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