FZ600R17KE4 Infineon IGBT

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FZ600R17KE4

Model: FZ600R17KE4
402 Units in Stock
Manufactured by: Infineon

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Description of FZ600R17KE4

Description

Powerex NFM IGBT Modules are designed for use in hard switching (15-30 kHz) applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings

Ratings	Symbol	CM600HC-24NFM	Units
Junction Temperature	T_j	–40 to 150	°C
Storage Temperature	T_stg	–40 to 125	°C
Collector-Emitter Voltage (G-E Short)	V_CES	1200	Volts
Gate-Emitter Voltage (C-E Short)	V_GES	±20	Volts
Collector Current	I_C	600	Amperes
Peak Collector Current	I_CM	1200*	Amperes
Emitter Current**	I_E	600	Amperes
Peak Emitter Current**	I_EM	1200*	Amperes
Maximum Collector Dissipation* (T_C = 25°C)**	P_C	3670	Watts
Mounting Torque, M6 Main Terminal	-	40	in-lb
Mounting Torque, M6 Mounting	-	40	in-lb
Mounting Torque, G(E) Terminal M4	-	15	in-lb
Weight	-	370	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	V_ISO	2500	Volts

*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***Junction temperature (Tj) should not increase beyond 150°C.
****TC , Tf measured point is just under the chips.