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FZ750R65KE3 Infineon IGBT

FZ750R65KE3

  • Model: FZ750R65KE3
  • 119 Units in Stock
  • Manufactured by: Infineon

Description of FZ750R65KE3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings

RatingsSymbolCM600HU-12HUnits
Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Collector-Emitter Voltage (G-E SHORT)VCES600Volts
Gate-Emitter Voltage (C-E SHORT)VGES±20Volts
Collector Current (Tc = 25°C)IC600Amperes
Peak Collector Current (Tj ≤ 150°C)ICM1200*Amperes
Emitter Current** (Tc = 25°C)IE600Amperes
Peak Emitter Current**IEM1200*Amperes
Maximum Collector Dissipation (Tc = 25°C)Pc1560Watts
Mounting Torque, M8 Main Terminal-95in-lb
Mounting Torque, M6 Mounting-40in-lb
Mounting Torque, M4 Terminal-15in-lb
Weight-450Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)Viso2500Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).


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