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GT10J312(Q) Toshiba IGBT

GT10J312(Q)

  • Model: GT10J312(Q)
  • 892 Units in Stock
  • Manufactured by: Toshiba

Description of GT10J312(Q)

Category

Discrete Semiconductor Products

Family

Transistors - IGBTs - Single

Manufacturer

Toshiba Semiconductor and Storage

Series-
PackagingTube
Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)10A
Current - Collector Pulsed (Icm)20A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max60W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C400ns/400ns
Test Condition300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-220SM

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