IGC109T120T6RH Infineon IGBT

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IGC109T120T6RH

Model: IGC109T120T6RH
414 Units in Stock
Manufactured by: Infineon

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Description of IGC109T120T6RH

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters

Absolute Maximum Ratings

Characteristics	Symbol	CM75TL-24NF	Units
Power Device Junction Temperature	T_j	-40 to 150	°C
Storage Temperature	T_stg	-40 to 125	°C
Collector-Emitter Voltage (G-E Short)	V_CES	1200	Volts
Gate-Emitter Voltage (C-E Short)	V_GES	±20	Volts
Collector Current (T_C = 87°C)*	I_C	75	Amperes
Peak Collector Current (Tj ≤ 150°C)	I_CM	150**	Amperes
Emitter Current***	I_E	75	Amperes
Peak Emitter Current***	I_EM	150**	Amperes
Maximum Collector Dissipation (T_C = 25°C, T_j < 150°C)	P_C	520	Watts
Mounting Torque, M5 Mounting Screws	-	31	in-lb
Mounting Torque, M5 Main Terminal Screws	-	31	in-lb
Module Weight (Typical)	-	350	Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal	V_ISO	2500	Volts

*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).