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IGP20N60H3 Infineon IGBT

IGP20N60H3

  • Model: IGP20N60H3
  • 391 Units in Stock
  • Manufactured by: Infineon

Description of IGP20N60H3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters

Absolute Maximum Ratings

RatingsSymbolCM600DU-24FUnits
Junction TemperatureTj-40 to 150°C
Storage TemperatureTstg-40 to 125°C
Collector-Emitter Voltage (G-E SHORT)VCES1200Volts
Gate-Emitter Voltage (C-E SHORT)VGES±20Volts
Collector Current (Tc = 25°C)IC600Amperes
Peak Collector CurrentICM1200*Amperes
Emitter Current** (Tc = 25°C)IE600Amperes
Peak Emitter Current**IEM1200*Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)Pc1540Watts
Mounting Torque, M8 Main Terminal-95in-lb
Mounting Torque, M6 Mounting-40in-lb
G(E) Terminal, M4-15in-lb
Weight-1200Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)Viso2500Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).


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