>

IGW25N120H3 Infineon IGBT

IGW25N120H3

  • Model: IGW25N120H3
  • 393 Units in Stock
  • Manufactured by: Infineon

Description of IGW25N120H3

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

CharacteristicsSymbolTest ConditionsMin.Typ.Max.Units
Thermal Resistance, Junction to CaseRth(j-c)QPer IGBT 1/2 Module0.083°C/W
Thermal Resistance, Junction to CaseRth(j-c)DPer FWDi 1/2 Module0.13°C/W
Contact Thermal ResistanceRth(c-f)Per Module, Thermal Grease Applied0.010°C/W
Thermal ResistanceRth(j-c')Q
 Tc Measured Point
(Under Chips - IGBT Part)
0.035*°C/W

* If you use this value, Rth(f-a) should be measured just under the chips.


Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.