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IKCS08F60F2C Infineon IGBT

IKCS08F60F2C

  • Model: IKCS08F60F2C
  • 102 Units in Stock
  • Manufactured by: Infineon

Description of IKCS08F60F2C

Features

  • Silicon N-channel IGBT 1700V E version
  • Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT.
  • Low driving power: Low input capacitance advanced trench gate.
  • Low noise recovery: Ultra soft fast recovery diode.
  • High thermal fatigue durability: (delta Tc=70K, N>30,000cycles).
  • AlSiC base-plate/AlN substrate.

Key Parameters

Absolute Maximum Ratings (TC=25°C)

ItemSymbolUnitMBM800E17E
Collector Emitter VoltageVCESV1,700
Gate Emitter VoltageVGESV±20
Collector CurrentDCICA800
1msICp<


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