IKW30N60H3 Infineon IGBT

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IKW30N60H3

Model: IKW30N60H3
1200 Units in Stock
Manufactured by: Infineon

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Description of IKW30N60H3

Description

Power Diode Module DD110F series are designed for various rectifier circuits. DD110F has two diode chips connected in series in 25mm (1inch) width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for various input voltage.

Key Parameters

Maximum Ratings

Symbol	Item		Conditions	Ratings	Unit
V_RRM	Repetitive Peak Reverse Voltage			1200	V
V_RSM	Non-Repetitive Peak Reverse Voltage			1300	V
I_{F (AV)}	Average Forward Current		Single phase, half wave, 180° conduction, Tc:88°C	110	A
I_{F (RMS)}	R.M.S. Forward Current		Single phase, half wave, 180° conduction, Tc:88°C	172	A
I_FSM	Surge Forward Current		½cycle, 50/60Hz, peak Value, non-repetitive	2300/2550	A
I²t	I²t		Value for one cycle of surge current	26500	A²S
V_ISO	Isolation Breakdown Voltage (R.M.S.)		A.C.1minute	2500	V
Tj	Junction Temperature			-40 to +125	°C
Tstg	Storage Temperature			-40 to +125	°C
	Mounting Torque	Mounting (M5)	Recommended 1.5-2.5 (15-25)	2.7 (28)	N•m (kgf•cm)
	Mounting Torque	Terminal (M5)	Recommended 1.5-2.5 (15-25)	2.7 (28)	N•m (kgf•cm)
	Mass			170	g