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Key Parameters Absolute Maximum Ratings (TC=25°C) Item Symbol Unit MDM600E45A Repetitive Peak Reverse Voltage VRRM V 4,500 Forward... |
128 |
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Key ParametersMaximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, T j=25 °C V CE60VDC collector current, limited by Tjmax I... |
128 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Single Dual Collector Dual Emitter Collector- Emitter Voltage VCEO Max :1700 V... |
128 |
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APPLICATIONS Designed for: Motor controlsInverter NPT-Technology for 600V applications offers: very tight parameter distributionhigh ruggedness,... |
129 |
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KEY FEATURESABSOLUTE MAXIMUM RATINGS (TC=25oC) Item Symbol Unit MDM900E17D Repetitive Peak Reverse VoltageVRRMV1,700Forward... |
129 |
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Key Parameters Absolute Maximum Ratings (T C =25°C) Item Symbol Unit MBM600E17E Collector Emitter Voltage VCES V 1,700 Gate Emitter Voltage... |
129 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Half Bridge Module Collector- Emitter... |
129 |
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Key Parameters Absolute Maximum Ratings (TC=25 °C) Item Symbol Unit MDM600H65E Repetitive Peak Reverse Voltage VRRM V 6,500 Forward... |
130 |
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Applications Short circuit withstand time – 10 µsDesigned for: Motor controlsInverter NPT-Technology for 600V applications offers: very... |
130 |
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Key ParametersMechanical ParameterRaster size10.12 x 10.18mm2Area total / active103 / 71.5Emitter pad size8x( 1.78x2.58 )Gate pad size0.757 x... |
131 |
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Key Parameters Absolute Maximum Ratings (T C=25 ° C) Item Symbol Unit MDM900E45A Repetitive Peak Reverse Voltage VRRM V 4,500 Forward... |
131 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current at... |
131 |
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KEY PARAMETERS MAXIMUM RATINGS Parameter Symbol Value Unit Collector-emitter voltage, T j=25 °C V CE1200VDC collector current, limited by... |
132 |
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Manufacturer :Infineon |
132 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max... |
132 |
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Key Parameters Maximum Allowable Ratings (Tc = 25degC) Items Type MDN1200D33 Repetitive Peak Reverse Voltage VRRM V 3,300 Forward Current DC... |
132 |
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132 |
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132 |
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133 |
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Key Parameters Maximum ratings Parameter Symbol Value Unit Collector-emitter voltage, T j=25°C VCE 1200VDC collector current, limited by Tjmax... |
133 |
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133 |
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Manufacturer :Infineon Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max :1200 V Continuous Collector Current at... |
133 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Single Collector- Emitter Voltage VCEO... |
134 |
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Key Parameters Maximum ratings Parameter Symbol Value Unit Collector-emitter voltage, T j=25°C VCE 1200VDC collector current, limited by Tjmax... |
134 |
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Manufacturer :Infineon |
134 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS : Product :IGBT Silicon Modules Configuration :Hex Collector- Emitter Voltage VCEO Max... |
134 |
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134 |
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CategoryDiscrete Semiconductor ProductsFamilyTransistors - IGBTs - ModulesManufacturerInfineon TechnologiesSeries-Part StatusObsoleteIGBT... |
134 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max... |
135 |
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Manufacturer :Infineon Product Category :IGBT Modules RoHS :No Product :IGBT Silicon Modules Configuration :Dual Collector- Emitter Voltage VCEO Max... |
135 |
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