• Model: IRKL41-12
  • 217 Units in Stock
  • Manufactured by: IR

Description of IRKL41-12

Product Category:IGBT Modules
Product:IGBT Silicon Modules
Configuration:Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1600 V
Collector-Emitter Saturation Voltage:3.3 V
Continuous Collector Current at 25 C:800 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:6.25 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM130
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:8

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