KK25HB120 SanRex IGBT


  • Model: KK25HB120
  • 230 Units in Stock
  • Manufactured by: SanRex

Description of KK25HB120


Power Thyristor/Diode Module PK25HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. and electrically isolated mounting base make your mechanical design easy.

Key Parameters Maximum Ratings

VRRM*Repetitive Peak Reverse Voltage 1200V
VRSM*Non-Repetitive Peak Reverse Voltage 1350V
VDRMRepetitive Peak Off-State Voltage 1200V
IT(AV)*Average On-State CurrentSingle phase, half wave, 180° conduction, Tc : 94°C25A
IT(RMS)*R.M.S. On-State CurrentSingle phase, half wave, 180° conduction, Tc : 94°C39A
ITSM*Surge On-State Current½cycle, 50Hz/60Hz, peak Value, non-repetitive450/500A
I2t*I2tValue for one cycle of surge current1000A2S
PGMPeak Gate Power Dissipation 10W
PG(AV)Average Gate Power Dissipation 1W
IFGMPeak Gate Current 3A
VFGMPeak Gate Voltage (Forward) 10V
VRGMPeak Gate Voltage (Reverse) 5V
di/dtCritical Rate of Rise of On-State CurrentIG=100mA, Tj=25°C, VD=½VDRM, dIG/dt=0.1A/µs100A/µs
VISO*Isolation Breakdown Voltage (R.M.S.)A.C.1minute2500V
Tj*Operating Junction Temperature −40 to +125°C
Tstg*Storage Temperature −40 to +125°C
Mounting (M6)Recommended 2.5-3.9 (25-40)4.7 (48)N·m
Terminal (M5)Recommended 1.5-2.5 (15-25)2.7 (28)
 Mass 170g

* mark : Thyristor and Diode part. No mark : Thyristor part

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