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MBN1200E33C Hitachi IGBT

MBN1200E33C

  • Model: MBN1200E33C
  • 358 Units in Stock
  • Manufactured by: Hitachi

Description of MBN1200E33C

Key Parameters

Maximum Ratings (TC<=25°C)

ItemSymbolRated Value  Unit
Collector-Emitter VoltageVCES600V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC300A
1msICp600
Collector Power Dissipation
Pc
1040W
Junction Temperature Range
Tj-40 ~ +150°C
Storage Temperature Range
Tstg-40 ~ +125°C
Isolation Voltage (Terminal to Base AC, 1 min.)
VISO2,500V (RMS)
Mounting Torque Module Base to Heatsink
Ftor3 (30.6) N·m (kgf·cm)
Busbar to Main Terminal
M41.4 (14.3)
M63 (30.6)


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