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MBN1200E33E Hitachi IGBT

MBN1200E33E

  • Model: MBN1200E33E
  • 345 Units in Stock
  • Manufactured by: Hitachi

Description of MBN1200E33E

Application

  • Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders

Key Parameters Absolute Maximum Ratings

SymbolParameterConditionsRatingsUnit
VCEX (SUS)Collector-emitter voltageIC=1A, VEB=2V600V
VCEXCollector-emitter voltageVEB=2V600V
VCBOCollector-base voltageEmitter open600V
VEBOEmitter-base voltageCollector open7V
ICCollector currentDC75A
–ICCollector reverse currentDC (forward diode current)75A
PCCollector dissipationTC=25°C350W
IBBase currentDC4.5A
–ICSMSurge collector reverse current
(forward diode current)
Peak value of one cycle of 60Hz (half wave)750A
TjJunction temperature –40~+150°C
TstgStorage temperature –40~+125°C
VisoIsolation voltageCharged part to case, AC for 1 minute2500V
Mounting torqueMain terminal screw M51.47~1.96N·m
15~20kg·cm
Mounting screw M61.96~2.94N·m
20~30kg·cm
WeightTypical value210g


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