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MBN1200H45E2-H Hitachi IGBT

MBN1200H45E2-H

  • Model: MBN1200H45E2-H
  • 357 Units in Stock
  • Manufactured by: Hitachi

Description of MBN1200H45E2-H

Key Parameters

MAXIMUM RATINGS (Tc=25°C)

Item   Symbol      Rated Value       Unit   
Collector-Emitter VoltageVCES600V
Gate - Emitter VoltageVGES+/- 20V
Collector Current DCIC150A
 1 msICP300
Collector Power DissipationPC560W
Junction Temperature RangeTj-40 to +150°C
Storage Temperature RangeTstg-40 to +125°C
Isolation Voltage (Terminal to Base AC, 1 min.) VISO2500V(RMS)
Mounting Torque Module Base to HeatsinkFtor PDMB150E6 

3(30.6)

 PDMB150E6C 

3(30.6) 

 N•m (kgf•cm) 
 Bus Bar to Main Terminals

3(30.6)

2(20.4)



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