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MBN500H65E2 Hitachi IGBT

MBN500H65E2

  • Model: MBN500H65E2
  • 376 Units in Stock
  • Manufactured by: Hitachi

Description of MBN500H65E2

Key Parameters

Maximum Ratings (TC=25°C)

ItemSymbolRated Value
Unit
Collector-Emitter VoltageVCES1,200V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC600A
1msICp1,200
Collector Power Dissipation
Pc
3,600W
Junction Temperature Range
Tj-40 ~ +150°C
Storage Temperature Range
Tstg-40 ~ +125°C
Isolation Voltage (Terminal to Base AC, 1 min.)
VISO2,500V (RMS)
Mounting Torque Module Base to Heatsink
Ftor3 (30.6)
N·m (kgf·cm)
Busbar to Main Terminal
M41.4 (14.3)
M810.5 (107)


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