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MBN750H65E2 Hitachi IGBT

MBN750H65E2

  • Model: MBN750H65E2
  • 368 Units in Stock
  • Manufactured by: Hitachi

Description of MBN750H65E2

Key Parameters

MAXIMUM RATINGS (Tc=25°C)

Item   Symbol      PDMB400B12       Unit   
Collector-Emitter VoltageVCES1200V
Gate - Emitter VoltageVGES+/- 20V
Collector Current DCIC400A
 1 msICP800
Collector Power DissipationPC1900W
Junction Temperature RangeTj-40 to +150°C
Storage Temperature RangeTstg-40 to +125°C
Isolation Voltage (Terminal to Base AC, 1 min.) VISO2,500V
Mounting Torque Module Base to HeatsinkFtor

3

N•m

 Bus Bar to Main Terminals



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