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MG100J6ES50 Toshiba IGBT

MG100J6ES50

  • Model: MG100J6ES50
  • 267 Units in Stock
  • Manufactured by: Toshiba

Description of MG100J6ES50

Applications

  • High Power Switching
  • Motor Control

Key Parameters Maximum Ratings (Ta=25°C)

CharacteristicSymbolRatingUnit
Collector-Emitter VoltageVCES600V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC100A
1msICP200
Forward CurrentDCIF100A
1msIFM200
Collector Power Dissipation (Tc=25°C)PC450W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~125°C
Isolation VoltageVIsol2500(AC 1 min.)V
Screw Torque (Terminal/Mounting)-2/3N·m


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