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MG100Q2YS11 Toshiba IGBT

MG100Q2YS11

  • Model: MG100Q2YS11
  • 282 Units in Stock
  • Manufactured by: Toshiba

Description of MG100Q2YS11

Maximum Ratings (Ta = 25°C)

CharacteristicsSymbolRatingUnit
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC 100A
1msICP 200
Forward CurrentDCIF100A
1msIFM200
Collector Power Dissipation (Tc = 25°C)PC800W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40 ~ 125°C
Isolation VoltageVIsol2500
(AC 1 min.)		V
Screw Torque (Terminal/Mounting)-3/3Nm


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