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MG150Q2YS50 Toshiba IGBT

MG150Q2YS50

  • Model: MG150Q2YS50
  • 271 Units in Stock
  • Manufactured by: Toshiba

Description of MG150Q2YS50

Key Parameters Maximum Ratings (Ta=25°C)

CharacteristicSymbolRatingUnit
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES±20V
Collector CurrentDCIC (25°C / 80°C)200 / 150A
1msICP (25°C / 80°C)400 / 300
Forward CurrentDCIF150A
1msIFM300
Collector Power Dissipation (Tc=25°C)PC1250W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-40~125°C
Isolation VoltageVIsol2500(AC 1 min.)V
Screw Torque (Terminal/Mounting)-3/3N·m


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