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MG600Q1US59A Toshiba IGBT

MG600Q1US59A

  • Model: MG600Q1US59A
  • 318 Units in Stock
  • Manufactured by: Toshiba

Description of MG600Q1US59A

Key Parameters Maximum Ratings

SymbolParameterConditionsRatingsUnit
VCESCollector-emitter voltage 1200V
VGESGate-emitter voltage ±20V
VSESSense-emitter voltage 40V
ICCollector currentDC 600A
ICP1ms 1200
IFForward currentDC 600A
IFM1ms 1200
PCCollector power dissipationTC = 25°C2750W
TjJunction temperature 150°C
TstgStorage temperature range -40 ~ 125°C
VisolIsolation voltage 2500 (AC 1 minute)V
Screw torqueTerminal (M4/M6) 2/3N • m
Mounting 3


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