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MG75Q2YS52 Toshiba IGBT

MG75Q2YS52

  • Model: MG75Q2YS52
  • 322 Units in Stock
  • Manufactured by: Toshiba

Description of MG75Q2YS52

KEY PARAMETER MAXIMUM RATINGS (Ta=25oC)

CHARACTERISTICSYMBOLRATINGUNIT
Collector-Emitter VoltageVCES1200V
Gate-Emitter VoltageVGES±20
Collector Current  DC 

IC

(25oC/80oC) 

 100/75
1ms 

ICP

(25oC/80oC) 

200/150 
Forward Current  DCI75A  
1ms IFM150 

Collector Power Dissipation

(Tc=25oC)  

PC600 
Junction Temperature  T150 o
Storage Temperature Range  Tstg -40 ~ 125 o
Isolation Voltage  VISOI 

2500

(AC 1 minute) 

Screw Torque (Terminal/Mounting)  3/3 N.m 

 


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