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MIEB101H1200EH IXYS IGBT

MIEB101H1200EH

  • Model: MIEB101H1200EH
  • 564 Units in Stock
  • Manufactured by: IXYS

Description of MIEB101H1200EH

CategoriesDiscrete Semiconductor Products
Transistors - IGBTs - Modules
ManufacturerIXYS
Series-
Part StatusActive
IGBT Type-
ConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)183A
Power - Max630W
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 100A
Current - Collector Cutoff (Max)300µA
Input Capacitance (Cies) @ Vce7.43nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeChassis Mount
Package / CaseE3
Supplier Device PackageE3

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