>

MIO1200-33E11 IXYS IGBT

MIO1200-33E11

  • Model: MIO1200-33E11
  • 476 Units in Stock
  • Manufactured by: IXYS

Description of MIO1200-33E11

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:975 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:4.8 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:2

Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.